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Search for "atomic layer deposition" in Full Text gives 85 result(s) in Beilstein Journal of Nanotechnology.

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size

  • Felipe Wasem Klein,
  • Jean-Roch Huntzinger,
  • Vincent Astié,
  • Damien Voiry,
  • Romain Parret,
  • Houssine Makhlouf,
  • Sandrine Juillaguet,
  • Jean-Manuel Decams,
  • Sylvie Contreras,
  • Périne Landois,
  • Ahmed-Azmi Zahab,
  • Jean-Louis Sauvajol and
  • Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

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  • fall off the reference curve. Indeed, data obtained on poorly crystalline MoS2 films synthesized by DLI atomic layer deposition (not shown) are found systematically and significantly below the corresponding reference curve. Concerning the DLI-PP-CVD samples presented in Figure 7, the A(A1g)/A(Si111) vs
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Published 07 Mar 2024

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

  • Aleksandrs Dutovs,
  • Raimonds Popļausks,
  • Oskars Putāns,
  • Vladislavs Perkanuks,
  • Aušrinė Jurkevičiūtė,
  • Tomas Tamulevičius,
  • Uldis Malinovskis,
  • Iryna Olyshevets,
  • Donats Erts and
  • Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

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  • of templates, including evaporation masks [8][9][10], molds for nanowire array production using the supercritical fluid method [11], electrochemical deposition [12], atomic layer deposition [13], or traps for colloidal nanoparticle assembly [14]. Several applications, for example, color filtering [15
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Published 31 Jan 2024

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

  • Kristjan Kalam,
  • Peeter Ritslaid,
  • Tanel Käämbre,
  • Aile Tamm and
  • Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

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  • Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3
  • implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established. Keywords: atomic layer deposition; tin oxide; tin tetraiodide; Introduction Atomic layer-deposited SnO2 films
  • precursor combinations for obtaining SnO2 in atomic layer deposition (ALD) processes [9]. Two of these processes have employed SnI4 as the metal precursor with either O2 [10][11][12][13][14] or H2O2 [10][11][15] as oxidizer. Of these two oxygen sources, O2 would be more desirable because with it a hydrogen
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Published 13 Nov 2023

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

  • Mathias Franz,
  • Mahnaz Safian Jouzdani,
  • Lysann Kaßner,
  • Marcus Daniel,
  • Frank Stahr and
  • Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

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  • , Clemens-Winkler-Str. 6c, 09116 Chemnitz, Germany FAP Forschungs- und Applikationslabor Plasmatechnik GmbH, Gostritzer Str. 67B, 01217 Dresden, Germany 10.3762/bjnano.14.78 Abstract In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process
  • saturation behaviour of the process was investigated. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state. The finally established process in ALD mode shows a homogeneous coating at the wafer level. Keywords: atomic layer deposition (ALD); cobalt; low
  • -temperature ALD; PEALD; plasma-enhanced ALD; XPS; Introduction The atomic layer deposition (ALD) of cobalt films is an ongoing topic of interest [1]. Cobalt thin and ultrathin films play an important role in current generations of integrated circuits [2]. Compared to copper, the metal offers a greater
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Published 15 Sep 2023

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

  • Arbresha Muriqi and
  • Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

Graphical Abstract
  • (MLD) allows the deposition of these hybrid films using sequential, self-limiting reactions, similar to atomic layer deposition (ALD). In this paper, we use first principles density functional theory (DFT) to investigate the growth mechanism of titanium-containing hybrid organic–inorganic MLD films
  • organic–inorganic hybrid films for applications in several technological application areas, including packaging/encapsulation, electronics, batteries and biomedical applications [1][2][3][4]. MLD is very similar to the widely used atomic layer deposition (ALD) technique, which involves the fabrication of
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Published 02 Nov 2022

Design of surface nanostructures for chirality sensing based on quartz crystal microbalance

  • Yinglin Ma,
  • Xiangyun Xiao and
  • Qingmin Ji

Beilstein J. Nanotechnol. 2022, 13, 1201–1219, doi:10.3762/bjnano.13.100

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  • (CH3)2}4] on SAMs of chiral molecules by using the atomic layer deposition (ALD) technique [120]. The specific selection effect was verified by QCM measurements using valine (Val) as the target analyte. The TiO2-SAMs films were shown to preferentially adsorb ᴅ-Val, suggesting a reliable chiral selector
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Published 27 Oct 2022

Theoretical investigations of oxygen vacancy effects in nickel-doped zirconia from ab initio XANES spectroscopy at the oxygen K-edge

  • Dick Hartmann Douma,
  • Lodvert Tchibota Poaty,
  • Alessio Lamperti,
  • Stéphane Kenmoe,
  • Abdulrafiu Tunde Raji,
  • Alberto Debernardi and
  • Bernard M’Passi-Mabiala

Beilstein J. Nanotechnol. 2022, 13, 975–985, doi:10.3762/bjnano.13.85

Graphical Abstract
  • that of the monoclinic structure) [35]. Thus, our structural phase of reference in this work is cubic distorted fluorite zirconia since we are doping it and also due to the fact that actual experiments involving atomic layer deposition of TM-doped zirconia thin films revealed the cubic phase [26]. In
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Published 15 Sep 2022

Zinc oxide nanostructures for fluorescence and Raman signal enhancement: a review

  • Ioana Marica,
  • Fran Nekvapil,
  • Maria Ștefan,
  • Cosmin Farcău and
  • Alexandra Falamaș

Beilstein J. Nanotechnol. 2022, 13, 472–490, doi:10.3762/bjnano.13.40

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  • needed to develop efficient SERS substrates. The combination of several methods including nanosphere lithography, atomic layer deposition, electrodeposition, and electron-beam evaporation resulted in Au-covered hollow urchin-like ZnO structures (Figure 2e–k) [16]. The ZnO layer was deposited on a
  • substrate covered with polystyrene spheres by atomic layer deposition, followed by electrodeposition, which was used to grow ZnO nanowires onto the surface. The Au layer was deposited after burning off the polystyrene spheres by electron beam evaporation while monitoring its thickness. Considering the
  • their surface. In contrast, ZnO NRs with horizontal (100) and (101) orientations were observed to promote the growth of Au NPs and their homogenous distribution, resulting in the formation of “hot spots” necessary for enhancing the Raman signal [38]. Also, ZnO nanoarrays obtained using atomic layer
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Published 27 May 2022

Engineered titania nanomaterials in advanced clinical applications

  • Padmavati Sahare,
  • Paulina Govea Alvarez,
  • Juan Manual Sanchez Yanez,
  • Gabriel Luna-Bárcenas,
  • Samik Chakraborty,
  • Sujay Paul and
  • Miriam Estevez

Beilstein J. Nanotechnol. 2022, 13, 201–218, doi:10.3762/bjnano.13.15

Graphical Abstract
  • standard glass surface [82]. Another recent study stated that hollow, calcined TiO2 nanospheres (CSTiO2), synthesized by the combination of electrospinning and atomic layer deposition, have high antimicrobial activity against multidrug-resistant bacteria such as S. aureus strains compared to commercial
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Published 14 Feb 2022

Plasmon-enhanced photoluminescence from TiO2 and TeO2 thin films doped by Eu3+ for optoelectronic applications

  • Marcin Łapiński,
  • Jakub Czubek,
  • Katarzyna Drozdowska,
  • Anna Synak,
  • Wojciech Sadowski and
  • Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

Graphical Abstract
  • thicknesses in a range of 2 to 8 nm was deposited by atomic layer deposition (ALD) using a Beneq TFS 200 ALD system. This method provides precise control over the thickness with atomic accuracy. Trimethylaluminum (Sigma-Aldrich) and purified water were used as precursors. The deposition of the atomic layers
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Published 22 Nov 2021

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

  • Rafal Pietruszka,
  • Bartlomiej S. Witkowski,
  • Monika Ozga,
  • Katarzyna Gwozdz,
  • Ewa Placzek-Popko and
  • Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

Graphical Abstract
  • % for planar structures, respectively. The work, therefore, describes an environmentally friendly technology for PV architecture with surface textures increasing the efficiency of PV cells. Keywords: atomic layer deposition; hydrothermal method; photovoltaics; silicon; solar cell; zinc oxide
  • environmentally friendly solar cells are cells based on zinc oxide (ZnO). ZnO thin films can be obtained using many technologies, including molecular beam epitaxy, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, and atomic layer deposition (ALD) [3]. ALD attracts the attention of many
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Published 21 Jul 2021

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

  • Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

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Published 02 Jul 2021

Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures

  • Piotr Caban,
  • Rafał Pietruszka,
  • Jarosław Kaszewski,
  • Monika Ożga,
  • Bartłomiej S. Witkowski,
  • Krzysztof Kopalko,
  • Piotr Kuźmiuk,
  • Katarzyna Gwóźdź,
  • Ewa Płaczek-Popko,
  • Krystyna Lawniczak-Jablonska and
  • Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

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  • solution with no final passivation. Subsequent I–V measurements, however, confirmed that from these samples, only the sulfur-passivated ones provided the highest current density. The tested devices were fabricated by using the ALD method. Keywords: atomic layer deposition; external quantum efficiency
  • ; gallium arsenide; photovoltaics; surface passivation; Introduction The atomic layer deposition (ALD) method is used for silicon passivation in photovoltaics. In recent years we proposed the usage of ALD for the construction of simplified Si-based cells [1]. Once zinc oxide (ZnO) nanorods were employed as
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Published 28 Jun 2021

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

  • Sina Kaabipour and
  • Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

Graphical Abstract
  • deposition process. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are among other chemical methods for nanoparticle synthesis. CVD is a method that allows production of nanoparticles on a substrate [241]. The process consists of three steps. First, the addition of a volatile precursor in
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Published 25 Jan 2021

Atomic layer deposited films of Al2O3 on fluorine-doped tin oxide electrodes: stability and barrier properties

  • Hana Krýsová,
  • Michael Neumann-Spallart,
  • Hana Tarábková,
  • Pavel Janda,
  • Ladislav Kavan and
  • Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

Graphical Abstract
  • , Technická 5, 166 28 Prague 6, Czech Republic 10.3762/bjnano.12.2 Abstract Al2O3 layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO2/glass) substrates blocked electron transfer to
  • found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO. Keywords: Al2O3; atomic layer deposition (ALD); barrier properties; corrosion; electrochemistry; FTO
  • the topic of the present work, in which atomic layer deposition (ALD) is used as the coating technique [1]. This method is a gas-phase process which relies on a molecular approach. Therefore, a conformal coating, which reaches the pores and crevasses of the sample, can be obtained. Protective coating
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Published 05 Jan 2021

Antimicrobial metal-based nanoparticles: a review on their synthesis, types and antimicrobial action

  • Matías Guerrero Correa,
  • Fernanda B. Martínez,
  • Cristian Patiño Vidal,
  • Camilo Streitt,
  • Juan Escrig and
  • Carol Lopez de Dicastillo

Beilstein J. Nanotechnol. 2020, 11, 1450–1469, doi:10.3762/bjnano.11.129

Graphical Abstract
  • conditions, the size, length, and diameter of the nanostructures can be adjusted in order to control the physical properties of the NPs. Chemical methods A few examples of chemical methods that have been used to synthesize nanoparticles are the atomic layer deposition method, chemical reduction method
  • particle sizes, are listed in Table 2. The atomic layer deposition method is employed to grow metal oxide and metallic three-dimensional nanostructures using porous alumina membranes [41], electrostatically spun nanofibers [39][40] or electrosprayed spherical particles [38] as templates. As Figure 1 shows
  • atomic layer deposition techniques [38][39]. The results indicated that TiO2 nanospheres exhibited the best antimicrobial activity against methicillin-resistant Staphylococcus aureus 97-7 and 622-4 when the NPs were irradiated with UVA radiation for 60 minutes, which increased their antimicrobial
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Published 25 Sep 2020

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

  • Mathias Franz,
  • Romy Junghans,
  • Paul Schmitt,
  • Adriana Szeghalmi and
  • Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

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  • features cannot be achieved with dense silicon, i.e., a nanoporous silicon anode is required for a successful integration [8]. Also, integrated capacitors can benefit from the increased surface of nanowires with high aspect ratio. In combination with atomic layer deposition, one can fabricate integrated
  • wafer-level preparation, the iridium film was deposited by atomic layer deposition on rectangular Si(100) samples, using Ir(acac)3 and oxygen. Details are described by Genevée et al. [31]. The process was carried out with 45 and 90 cycles. One ALD cycle consists of pulsing Ir(acac)3 for 6 s, followed by
  • layer deposition (ALD), one can assume that a wafer-level integration is feasible. Figure 2 shows the surface of a silicon die after 90 cycles of Ir ALD. In this deposition phase, small Ir particles are grown. The particles agglomerate and start to form a continuous film. However, there are still voids
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Published 23 Sep 2020

Atomic layer deposition for efficient oxygen evolution reaction at Pt/Ir catalyst layers

  • Stefanie Schlicht,
  • Korcan Percin,
  • Stefanie Kriescher,
  • André Hofer,
  • Claudia Weidlich,
  • Matthias Wessling and
  • Julien Bachmann

Beilstein J. Nanotechnol. 2020, 11, 952–959, doi:10.3762/bjnano.11.79

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  • of the salts followed by their thermal decomposition. In the alternative method, more academic in nature, atomic layer deposition (ALD) is applied to the felts after anodization. ALD allows for a controlled coating with ultralow noble-metal loadings in narrow pores. In acidic electrolyte, the ALD
  • approach yields improved mass activity (557 A·g−1 as compared to 80 A·g−1 at 0.39 V overpotential) on the basis of the noble-metal loading, as well as improved stability. Keywords: atomic layer deposition (ALD); oxygen evolution reaction (OER); redox flow battery; vanadium–air redox flow battery (VARFB
  • the Ti support and subsequent thermal decomposition to the corresponding elements [16][17][18]. As an academic method yielding better control of the electrode surface geometry, we perform an “anodization” of the Ti fibers to generate an ordered porous layer, followed by atomic layer deposition (ALD
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Published 22 Jun 2020

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

  • Vadim Morari,
  • Aida Pantazi,
  • Nicolai Curmei,
  • Vitalie Postolache,
  • Emil V. Rusu,
  • Marius Enachescu,
  • Ion M. Tiginyanu and
  • Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

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  • radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) [2][7][10][11], DC [12][13] and RF [1][3][6] magnetron sputtering, pulsed laser deposition (PLD) [14][15], plasma-enhanced atomic layer deposition (PE-ALD) [16], chemical vapor deposition (CVD) [17], metal–organic chemical vapor deposition
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Published 12 Jun 2020

Effect of Ag loading position on the photocatalytic performance of TiO2 nanocolumn arrays

  • Jinghan Xu,
  • Yanqi Liu and
  • Yan Zhao

Beilstein J. Nanotechnol. 2020, 11, 717–728, doi:10.3762/bjnano.11.59

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  • template (AAO) has constituted an important advance in the field of film preparation, since it allows the formation of nanostructured films with a high degree of morphology control [22]. Furthermore, according to Das et al. [23], the use of atomic layer deposition (ALD) for the preparation of TiO2 films
  • solar energy harvesting in photovoltaic and photocatalytic applications owing to their extremely high visible-light absorption and tuned effective band gap. In this work, Ag-loaded TiO2 nanocolumn (Ag-TNC) arrays were fabricated based on anodic aluminum oxide (AAO) template by combining atomic layer
  • deposition (ALD) and vacuum evaporation. The effects of the Ag loading position and deposition thickness, and the morphology, structure and composition of Ag-deposited TNC arrays on its optical and photocatalytic properties were studied. The Ag-filled TiO2 (AFT) nanocolumn arrays exhibited higher removal
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Published 05 May 2020

DFT calculations of the structure and stability of copper clusters on MoS2

  • Cara-Lena Nies and
  • Michael Nolan

Beilstein J. Nanotechnol. 2020, 11, 391–406, doi:10.3762/bjnano.11.30

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  • enable the use of 2D materials in technology applications, processes have been developed to grow 2D materials via chemical vapour deposition (CVD) [16][17] and atomic layer deposition (ALD) [18][19]. The films prepared via thin film deposition were comparable in performance to materials obtained via
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Published 26 Feb 2020

Abrupt elastic-to-plastic transition in pentagonal nanowires under bending

  • Sergei Vlassov,
  • Magnus Mets,
  • Boris Polyakov,
  • Jianjun Bian,
  • Leonid Dorogin and
  • Vahur Zadin

Beilstein J. Nanotechnol. 2019, 10, 2468–2476, doi:10.3762/bjnano.10.237

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  • extreme surface-to-volume ratio. If surface nucleation is mitigated by, for example, external materials (coating), the onset of plastic yield can be significantly postponed. Hence, we performed a few preliminary tests on Ag NWs coated by atomic layer deposition (ALD) with a few-nm thick layer of alumina
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Published 12 Dec 2019

Semitransparent Sb2S3 thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

  • Jako S. Eensalu,
  • Atanas Katerski,
  • Erki Kärber,
  • Lothar Weinhardt,
  • Monika Blum,
  • Clemens Heske,
  • Wanli Yang,
  • Ilona Oja Acik and
  • Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

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  • employing an 87 nm thick Sb2S3 thin film absorber grown by atomic layer deposition (ALD) [18], whereas a PCE of 4.25% was reported when using Sb2S3 layers grown by CBD [21]. Unfortunately, the Sb2O3 impurity phase, which is considered detrimental to PV performance, unavoidably forms in the bulk of the Sb2S3
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Published 06 Dec 2019

Facile synthesis of carbon nanotube-supported NiO//Fe2O3 for all-solid-state supercapacitors

  • Shengming Zhang,
  • Xuhui Wang,
  • Yan Li,
  • Xuemei Mu,
  • Yaxiong Zhang,
  • Jingwei Du,
  • Guo Liu,
  • Xiaohui Hua,
  • Yingzhuo Sheng,
  • Erqing Xie and
  • Zhenxing Zhang

Beilstein J. Nanotechnol. 2019, 10, 1923–1932, doi:10.3762/bjnano.10.188

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  • . deposited iron oxide on CNTs by atomic layer deposition (ALD) and the obtained CNTs@Fe2O3 presented a specific capacitance of 580.6 F·g−1 at 5 A·g−1 [21]. Zhang et al. used magnetron sputtering to prepare sandwich-like CNT@Fe2O3@C structures, and the composite exhibited a specific capacitance of 787.5 F·g−1
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Published 23 Sep 2019

Novel hollow titanium dioxide nanospheres with antimicrobial activity against resistant bacteria

  • Carol López de Dicastillo,
  • Cristian Patiño,
  • María José Galotto,
  • Yesseny Vásquez-Martínez,
  • Claudia Torrent,
  • Daniela Alburquenque,
  • Alejandro Pereira and
  • Juan Escrig

Beilstein J. Nanotechnol. 2019, 10, 1716–1725, doi:10.3762/bjnano.10.167

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  • this work, novel, hollow, calcined titanium dioxide nanospheres (CSTiO2) were successfully synthesized for the first time through the combination of electrospinning and atomic layer deposition techniques. Poly(vinylpyrrolidone) (PVP) electrosprayed spherical particles were double-coated with alumina
  • ; atomic layer deposition; electrospinning; hollow nanospheres; titanium dioxide; Introduction Microbial contamination and the increase of multidrug bacterial resistance have become two major current concerns for food safety and human health due to the number of food-borne diseases and nosocomial
  • [10][15]. In this work, the combination of electrospinning and atomic layer deposition (ALD) technologies are presented as an innovative strategy to develop titanium dioxide hollow nanospheres with controlled and homogeneous dimensions. Electrospinning is a technique able to produce different
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Published 19 Aug 2019
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